2SD1805_15 datasheet(1/3 Pages) KEXIN

Part #	2SD1805

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SD1805

■

Features

●

Low Collector-to-Emitter Saturation Voltage

●

Fast Switching Speed

●

Large current capacity

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

20

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

5

Collector Current - Pulse

ICP

8

Collector Power Dissipation

Tc = 25℃

15

Ta = 25℃

1

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

PC

W

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， RBE= ∞

20

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=3 A, IB=60mA

0.22

0.5

Base - emitter saturation voltage

VBE(sat) IC=3 A, IB=60mA

1.5

hFE(1)

VCE= 2V, IC= 500mA

120

560

hFE(2)

VCE= 2V, IC= 3 A

95

Turn-on Time

ton

30

Storage Time

tstg

300

Fall Time

tf

40

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

45

pF

Transition frequency

fT

VCE= 10V, IC= 50 mA

120

MHz

DC current gain

V

See Test Circuit

ns

V

uA

■

Classification of hfe(1)

Type

2SD1805-E

2SD1805-F

2SD1805-G

Range

120-200

160-320

280-560

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2SD1805 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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