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PCHMB150B12 Datasheet(PDF) 1 Page - National Instruments Corporation

Part # PCHMB150B12
Description  竊묕폊竊?竊∽펽竊묕폃竊먲폁竊
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Manufacturer  NI [National Instruments Corporation]
Direct Link  http://www.NI.com
Logo NI - National Instruments Corporation

PCHMB150B12 Datasheet(HTML) 1 Page - National Instruments Corporation

  PCHMB150B12_15 Datasheet HTML 1Page - National Instruments Corporation PCHMB150B12_15 Datasheet HTML 2Page - National Instruments Corporation PCHMB150B12_15 Datasheet HTML 3Page - National Instruments Corporation  
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日本インター株式会社
IGBT Module-Chopper
15
0 A,1200V
PCHMB150B12
□ 回 路 図 :
CIRCUIT
□ 外 形 寸 法 図 :
OUTLINE DRAWING
Dimension:[mm]
□ 最 大 定 格 :
MAXIMUM RATINGS (T
=25℃)
Item
Symbol
Rated
Value
Unit
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
1,200
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
±20
DC
150
コ レ
ク タ 電
Collector Current
1ms
CP
300
コ レ
ク タ 損
Collector Power Dissipation
730
Junction
Temperature
Range
-40~+150
Storage Temperature Range
stg
-40~+125
圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
2,500
(RMS)
Module Base to Heatsink
3(30.6)
締 め 付 け ト ル ク
Mounting
Torque
Busbar to Main Terminal
tor
2(20.4)
N・m
(kgf・cm)
□ 電 気 的 特 性
ELECTRICAL CHARACTERISTICS (T
=25℃)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
コ レ
ク タ 遮
断 電
Collector-Emitter Cut-Off Current
CES
CE= 1200V,VGE= 0V
3.0
mA
ゲ ー
ト 漏 れ
電 流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
1.0
μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat)
= 150A,VGE= 15V
1.9
2.4
ゲ ー
ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 150mA
4.0
8.0
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
12,600
pF
上 昇 時 間 Rise
Time
0.25
0.45
ターンオン時間 Turn-on Time
on
0.40
0.70
下 降 時 間 Fall
Time
0.25
0.35
スイッチング時間
Switching Time
ターンオフ時間 Turn-off Time
off
CC= 600V
L= 4Ω
G= 3.6Ω
GE= ±15V
0.80
1.10
μs
□フリーホイーリングダイオードの 特 性:
FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T
=25℃)
Item
Symbol
Rated
Value
Unit
DC
150
Forward Current
1ms
FM
300
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Peak Forward Voltage
= 150A,VGE= 0V
1.9
2.4
逆 回
復 時 間
Reverse Recovery Time
rr
= 150A,VGE= -10V
di/dt= 300A/μs
0.2
0.3
μs
□ 熱
特 性
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
IGBT
0.16
Thermal Impedance
Diode
Rth(j-c)
Junction to Case
0.32
℃/W
5(E1)
4(G1)
(C1)
3
(E2)
2
(C2E1)
1
14
9
14
9
14
4-fasten tab
#110 t=0.5
LABEL
2-Ø6.5
23.0
23.0
17.0
3-M5
±0.25
12.0
12.0
12.0
11.0
11.0
80
94.0
1
2
3
5
4


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