The information in this document is subject to change without notice.

SILICON TRANSISTOR

HIGH-FREQUENCY LOW-NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2

uuuu 2SC5184) THIN-TYPE SMALL MINI MOLD

1997

©

Document No. P12693EJ1V0DS00 (1st edition)

Date Published July 1997 N

Printed in Japan

PRELIMINARY DATA SHEET

PIN CONFIGURATION (Top View)

FEATURES

•

Low noise

•

6-pin thin-type small mini mold package adopted

•

Built-in 2 transistors (2

u 2SC5184)

ORDERING INFORMATION

Part Number

Quantity

Packing Style

PPA828TF

Loose products

(50 pcs)

PPA828TF-T1

Taping products

(3 kpcs/reel)

Remark If you require an evaluation sample, please contact

an NEC Sales Representative (Unit sample quantity

is 50 pcs).

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Parameter

Symbol

Rating

Unit

Collector to Base Voltage

5V

Collector to Emitter Voltage

3V

Emitter to Base Voltage

2V

Collector Current

30

mA

Total Power Dissipation

90 in 1 element

180 in 2 elements

mW

Junction Temperature

150

°C

Storage Temperature

ð65 to +150

°C

Caution is required concerning excess input, such as from static electricity, due to the high-precision

fabrication processes used for this device.

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2

Emitter), Pin 4 (Q2 Base) face to

perforation side of the tape.

PACKAGE DRAWINGS (Unit: mm)

B1

Q1

Q2

6

5

4

3

2

1

E2

B2

C1

E1

C2

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter

(Q1)

3. Collector (Q2)

4. Base

(Q2)

5. Emitter (Q2)

6. Base

(Q1)

2.10±0.1

1.25±0.1