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2SB1174-P Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1174-P Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SB1174 ■ Features ● Satisfactory linearity of forward current transfer ratio hFE ● Low collector-emitter saturation voltage VCE(sat) ● Large collector current IC 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -130 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -3 Collector current -Pulse ICP -6 Collector Power Dissipation 15 Ta = 25℃ 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -130 Collector- emitter breakdown voltage VCEO Ic= -10 mA, IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -100V , IE=0 -10 Emitter cut-off current IEBO VEB= -6V , IC=0 -50 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-100mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-100mA -1.5 VCE= -2V, IC= -100 mA 45 VCE= -2V, IC= -500 mA 90 260 Turn-ON Time ton 0.3 Storage Time tstg 1.1 Fall Time tf 0.3 Transition frequency fT VCE= -10V, IC= -500mA,f=10MHz 30 MHz V V uA DC current gain hFE IC = −0.5A, IB1 = −50 mA, IB2 = 50 mA VCC = −50 V us ■ Classification of hfe(2) Type 2SB1174-Q 2SB1174-P Range 90-180 130-260 |
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