UPA810 datasheet(2/12 Pages) NEC

Part #	UPA810

Description	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

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Manufacturer	NEC [NEC]

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µPA810TC

2

Data Sheet P14550EJ1V0DS00

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

ICBO

VCB = 10 V, IE = 0

–

1.0

µA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

–

1.0

µA

DC Current Gain

hFE

VCE = 3 V, IC = 7 mANote 1

70

–

140

Gain Bandwidth Product

fT

VCE = 3 V, IC = 7 mA, f = 1 GHz

3.0

4.5

–

GHz

Feedback Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHzNote 2

–

0.7

1.5

pF

Insertion Power Gain

|S21e|2

VCE = 3 V, IC = 7 mA, f = 1 GHz

7.0

9.0

–

dB

Noise Figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

–

1.2

2.5

dB

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty Cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

FB

Marking

75

hFE Value

70 to 140

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