TIP42-S datasheet(2/4 Pages) BOURNS

Part #	TIP42-S

Description	PNP SILICON POWER TRANSISTORS

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Manufacturer	BOURNS [Bourns Electronic Solutions]

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TIP42, TIP42A, TIP42B, TIP42C

PNP SILICON POWER TRANSISTORS

2

PRODU CT

INFORMA TION

DECEMBER 1970 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = -30 mA

(see Note 5)

IB = 0

TIP42

TIP42A

TIP42B

TIP42C

-40

-60

-80

-100

V

ICES

Collector-emitter

cut-off current

VCE = -80 V

VCE = -100 V

VCE = -120 V

VCE = -140 V

VBE =0

TIP42

TIP42A

TIP42B

TIP42C

-0.4

mA

ICEO

Collector cut-off

current

VCE = -30 V

VCE = -60 V

IB =0

TIP42/42A

TIP42B/42C

-0.7

mA

IEBO

Emitter cut-off

current

VEB =

-5 V

IC =0

-1

mA

hFE

Forward current

transfer ratio

VCE =

-4 V

VCE =

-4 V

IC =-0.3 A

IC =

- 3A

(see Notes 5 and 6)

30

15

75

VCE(sat)

Collector-emitter

saturation voltage

IB =

-0.6 A

IC = -6 A

(see Notes 5 and 6)

-1.5

V

VBE

Base-emitter

voltage

VCE =

-4 V

IC =

-6 A

(see Notes 5 and 6)

-2

V

hfe

Small signal forward

current transfer ratio

VCE = -10 V

IC =-0.5 A

f = 1 kHz

20

|h

fe|

Small signal forward

current transfer ratio

VCE = -10 V

IC =-0.5 A

f = 1 MHz

3

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.92

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = -6 A

VBE(off) = 4 V

IB(on) = -0.6 A

RL = 5 Ω

IB(off) = 0.6 A

tp = 20 µs, dc ≤ 2%

0.4

µs

toff

Turn-off time

0.7

µs

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