Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


UPA807T Datasheet(PDF) 1 Page - NEC

Part No. UPA807T
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  NEC [NEC]
Homepage  http://www.nec.com/
Logo 

   
 1 page
background image
SILICON TRANSISTOR
FEATURES
Low Current, High Gain
|S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
A Super Mini Mold Package Adopted
Built-in 2 Transistors (2
× 2SC5179)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA807T
Loose products
(50 PCS)
µPA807T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30 in 1 element
mW
60 in 2 elements
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
µPA807T
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published
November 1996 N
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
2.1±0.1
1.25±0.1
PACKAGE DRAWINGS
(Unit: mm)
©
1994
DATA SHEET
©
1995
65
4
12
3
Q1
Q2
PIN CONNECTIONS
PIN CONFIGURATION (Top View)
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.




Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
UPA808TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD 1 2 3 4 5 MoreNEC
UPA806TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 1 2 3 4 5 MoreNEC
UPA809TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 1 2 3 4 5 MoreNEC
UPC805TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 1 2 3 4 5 MoreNEC
UPA800THIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 1 2 3 4 5 MoreNEC
UPA802THIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 1 2 3 4 5 MoreNEC
2SC4187MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD 1 2 3 4 5 MoreNEC
2SC4225MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD 1 2 3 4 5 MoreNEC
UPA811THIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD 1 2 3 4 5 MoreNEC
UPA812THIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD 1 2 3 4 5 MoreNEC

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl