NE85635 datasheet(3/26 Pages) CELDUC

Part #	NE85635

Description	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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Manufacturer	CELDUC [celduc-relais]

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NE856 SERIES

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

V

20

VCEO

Collector to Emitter Voltage

V

12

VEBO

Emitter to Base Voltage

V

3.0

IC

Collector Current

mA

100

TJ

Junction Temperature

°C

1502

TSTG

Storage Temperature

°C

-65 to +150

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

Notes:

1. Operation in excess of any one of these parameters may result

in

permanent damage.

2. Maximum TJ for the NE85600 and NE85635 is 200°C.

FORWARD CURRENT GAIN

vs. COLLECTOR CURRENT

Collector to Base Voltage, VCB (V)

Collector Current, IC (mA)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Ambient Temperature, TA (°C)

NE85632 AND NE85634

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

NE85633 AND NE85635

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

COLLECTOR TO BASE

CAPACITANCE vs. COLLECTOR

TO BASE VOLTAGE

NE85635

NE85633

0

50

100

150

200

400

300

200

100

0

NE85634

Ceramic Substrate

2.5 cm X 0.7 mm

RTH (J-A) = 62.5˚C/W

NE85632

with Heat

Sink

Aluminum

Heat Sink

for NE85632

NE85632

Free Air

NE85634

Free Air

0

50

100

150

2.4

2.0

1.6

1.2

0.8

0.4

0

10

7.8

3.8

2

NE85634

NE85632/

33

NE85635

1

2

3

5

7

10

20

30

50

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

VCE = 10 V

1

2

3

5

7

10

20

30

50

500

300

200

100

70

50

30

20

10

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NE85635 Datasheet(PDF) 3 Page - celduc-relais

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