UPA800T datasheet(2/6 Pages) NEC

Part #	UPA800T

Description	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

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Manufacturer	NEC [NEC]

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µPA800T

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Current

ICBO

VCB = 10 V, IE = 0

1.0

µA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

1.0

µA

DC Current Gain

hFE

VCE = 3 V, IC = 5 mANote 1

80

200

Gain Bandwidth Product

fT

VCE = 3 V, IC = 5 mA

5.5

80

GHz

Feed-back Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHzNote 2

0.7

pF

Insertion Power Gain (1)

|S21e|2

VCE = 1 V, IC = 3 mA, f = 2 GHz

4.5

6.5

dB

Insertion Power Gain (2)

|S21e|2

VCE = 3 V, IC = 5 mA, f = 2 GHz

5.5

7.5

dB

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.9

3.2

dB

Noise Figure (2)

NF

VCE = 3 V, IC = 5 mA, f = 2 GHz

1.9

3.2

dB

Notes 1. Pulse Measurement: Pw

≤ 350

µs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

KB

Marking

RL

hFE Value

80 to 200

TYPICAL CHARACTERISTICS (TA = 25

°C)

100

0

5

0

10

0.5

50

100

150

200

5

1.0

10

15

20

0

0.5

1.0

10

20

1

5

10

50

20

50

100

200

VCE = 3 V

120 A

100 A

80 A

IB = 20 A

Ambient Temperature TA (°C)

Collector to Emitter Voltage VCE (V)

Base to Emitter Voltage VBE (V)

Collector Current IC (mA)

60 A

40 A

25

Free Air

IC - VBE Characteristics

hFE - IC Characteristics

PT - TA Characteristics

IC - VCE Characteristics

2 Elements

in

Total

Per

Element

160

A

µ

140

A

µ

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