J112-TR1 datasheet(5/6 Pages) VISHAY

Part #	J112-TR1

Description	N-Channel JFETs

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 6 page

J/SST111 Series

Vishay Siliconix

Document Number: 70232

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-5

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics

100

010

80

60

40

20

0

VDS – Drain-Source Voltage (V)

24

6

8

Common-Gate Output Admittance

100

10

1

0.1

100

1000

200

500

VDG = 10 V

ID = 10 mA

TA = 25_C

f – Frequency (MHz)

Output Characteristics

40

0

1.0

32

24

16

8

0

VDS – Drain-Source Voltage (V)

0.2

0.4

0.6

0.8

Transfer Characteristics

100

0

–5

80

60

40

20

0

VGS – Gate-Source Voltage (V)

–1

–2

–3

–4

gog

bog

VGS = 0 V

–0.5

–1.0

–1.5

–2.0

–2.5

VGS(off) = –4 V

VGS = 0 V

–0.5

–1.0

–1.5

–2.0

–2.5

–3.0

VGS(off) = –4 V

TA = –55_C

25

_C

125

_C

VDS = 20 V

SWITCHING TIME TEST CIRCUIT

J/SST111

J/SST112

J/SST113

VGS(L)

–12 V

–7 V

–5 V

RL*

800

W

1600

W

3200

W

ID(on)

12 mA

6 mA

3 mA

*Non-inductive

INPUT PULSE

SAMPLING SCOPE

Rise Time < 1 ns

Fall Time < 1 ns

Pulse Width 100 ns

PRF 1 MHz

Rise Time 0.4 ns

Input Resistance 10 M

W

Input Capacitance 1.5 pF

51

W

51

W

1

k

W

VGS

Scope

VDD

RL

OUT

VGS(H)

VGS(L)

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