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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-

able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (321) 724-7000

FAX: (321) 724-7240

EUROPE

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

ASIA

Intersil (Taiwan) Ltd.

Taiwan Limited

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

Die Characteristics

DIE DIMENSIONS:

Size: 2390

µm x 2390µm (94 mils x 94 mils)

Thickness: 525

µm ±25µm (20.6 mils ±1 mil)

Bond Pad: 110

µm x 110µm (4.3 mils x 4.3 mils)

METALLIZATION: Al

Metal 1 Thickness: 0.7

µm ±0.1µm

Metal 2 Thickness: 1.0

µm ±0.1µm

SUBSTRATE POTENTIAL:

Unbiased Insulator

PASSIVATION

Type: Phosphorous Silicon Glass (PSG)

Thickness: 1.30

µm ±0.15µm

SPECIAL INSTRUCTIONS:

ADDITIONAL INFORMATION:

Transistor Count: 176

Metallization Mask Layout

ACS08MS

B1

A1

B4

Y1

A2

NC

B2

A4

Y4

NC

B3

Y2

GND

Y3

A3

ACS08MS