IRLR014NPbF

IRLU014NPbF

S

D

G

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

5.3

Case-to-Ambient (PCB mount)**

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

Description

10/01/10

www.irf.com

1

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve the lowest

possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

10

7.1

A

Pulsed Drain Current



40

Power Dissipation

28

W

Linear Derating Factor

0.2

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy

‚

35

mJ

Avalanche Current



6.0

A

Repetitive Avalanche Energy



2.8

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

D-Pak

IRLR014NPbF

I-Pak

IRLU014NPbF

PD - 95551B