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IRGP4063-EPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGP4063-EPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  INSULATED GATE BIPOLAR TRANSISTOR IRGP4063PbF IRGP4063-EPbF PD - 97404 1 www.irf.com 06/30/09 VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C •5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Tight parameter distribution • Lead Free Package Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI G C E Gate Collector Emitter TO-247AC IRGP4063PbF TO-247AD IRGP4063-EPbF G C E C G C E C E C G n-channel Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 96 h IC @ TC = 100°C Continuous Collector Current 48 ICM Pulse Collector Current, VGE = 15V 144 A ILM Clamped Inductive Load Current, VGE = 20V c 192 A VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 330 W PD @ TC = 100°C Maximum Power Dissipation 170 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 |
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