©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

NPN Epitaxial Silicon Transistor

Symbol

Parameter

Value

Units

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

150

mA

Collector Power Dissipation

250

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

60

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-off Current

0.1

µA

Emitter Cut-off Current

0.1

µA

DC Current Gain

40

700

Collector-Emitter Saturation Voltage

0.15

0.3

V

Current Gain Bandwidth Product

300

MHz

Output Capacitance

2.5

pF

NF

Noise Figure

4.0

dB

Classification

R

O

Y

G

L

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

KSC945

Audio Frequency Amplifier & High

Frequency OSC.

• Complement to KSA733

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1