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UPA1910 Datasheet(PDF) 2 Page - NEC |
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UPA1910 Datasheet(HTML) 2 Page - NEC |
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2 / 8 page  Data Sheet D13105EJ2V0DS00 2 µµµµPA1910 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –12 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±10 V, VDS = 0 V ±10 µA Gate to Source Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –0.4 –0.72 –1.5 V Forward Transfer Admittance | yfs |VDS = –10 V, ID = –1.5 A1 5.1 S Drain to Source On-state Resistance RDS(on)1 VGS = –4.5 V, ID = –1.5 A60 80 m Ω RDS(on)2 VGS = –4.0 V, ID = –1.5 A63 90 m Ω RDS(on)3 VGS = –3.0 V, ID = –1.0 A 75 100 m Ω RDS(on)4 VGS = –2.5 V, ID = –1.0 A 86 130 m Ω Input Capacitance Ciss VDS = –10 V 386 pF Output Capacitance Coss VGS = 0 V 283 pF Reverse Transfer Capacitance Crss f = 1 MHz 154 pF Turn-on Delay Time td(on) VDD = –10 V 131 ns Rise Time tr ID = –1.5 A 603 ns Turn-off Delay Time td(off) VGS(on) = –4.0 V 427 ns Fall Time tf RG = 10 Ω 1470 ns Total Gate Charge QG VDD = –10 V6.7 nC Gate to Source Charge QGS ID = –3.0 A1.6 nC Gate to Drain Charge QGD VGS = –4.0 V2.9 nC Diode Forward Voltage VF(S-D) IF = 2.5 A, VGS = 0 V0.74 V Reverse Recovery Time trr IF = 2.5 A, VGS = 0 V 30.0 ns Reverse Recovery Charge Qrr di/dt = 10 A / µs2.2 nC PG. RG 0 VGS D.U.T. RL VDD τ = 1 s µ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 % VGS(on) 10 % 0 ID 90 % 90 % td(on) tr td(off) tf 10 % τ RG = 10 Ω ID 0 ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE • • • • • • • • • • • • • • • • |
Similar Part No. - UPA1910 |
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Similar Description - UPA1910 |
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