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E28F400CVT60 Datasheet(PDF) 6 Page - Intel Corporation

Part # E28F400CVT60
Description  4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

E28F400CVT60 Datasheet(HTML) 6 Page - Intel Corporation

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4-MBIT SmartVoltage BOOT BLOCK FAMILY
E
6
PRELIMINARY
For
program
and
erase
operations,
5V
VPP
operation eliminates the need for in system voltage
converters, while 12V VPP operation provides faster
program and erase for situations where 12V is
available, such as manufacturing or designs where
12V is in-system. For design simplicity, however,
just hook up VCC and VPP to the same 5V ± 10%
source.
The 28F400/28F004B boot block flash memory
family is a high-performance, 4-Mbit (4,194,304 bit)
flash
memory
family
organized
as
either
256 Kwords of 16 bits each (28F400 only) or
512 Kbytes of 8 bits each (28F400 and 28F004B).
Separately erasable blocks, including a hardware-
lockable boot block (16,384 bytes), two parameter
blocks (8,192 bytes each) and main blocks (one
block of 98,304 bytes and three blocks of 131,072
bytes),
define
the
boot
block
flash
family
architecture. See Figures 7 and
8 for memory
maps. Each block can be independently erased and
programmed
100,000
times
at
commercial
temperature
or
10,000
times
at
extended
temperature.
The boot block is located at either the top (denoted
by -T suffix) or the bottom (-B suffix) of the address
map
in
order
to
accommodate
different
microprocessor protocols for boot code location.
The
hardware-lockable
boot
block
provides
complete code security for the kernel code required
for system initialization. Locking and unlocking of
the boot block is controlled by WP# and/or RP#
(see Section 3.4 for details).
The Command User Interface (CUI) serves as the
interface
between
the
microprocessor
or
microcontroller and the internal operation of the
boot block flash memory products. The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and
erase
operations,
including
verifications,
thereby
unburdening
the
microprocessor
or
microcontroller of these tasks. The Status Register
(SR) indicates the status of the WSM and whether it
successfully completed the desired program or
erase operation.
Program and Erase Automation allows program and
erase operations to be executed using an industry-
standard two-write command sequence to the CUI.
Data writes are performed in word (28F400 family)
or byte (28F400 or 28F004B families) increments.
Each byte or word in the flash memory can be
programmed
independently
of
other
memory
locations, unlike erases, which erase all locations
within a block simultaneously.
The 4-Mbit SmartVoltage boot block flash memory
family is also designed with an Automatic Power
Savings (APS) feature which minimizes system
battery current drain, allowing for very low power
designs. To provide even greater power savings,
the boot block family includes a deep power-down
mode which minimizes power consumption by
turning most of the flash memory’s circuitry off.
This mode is controlled by the RP# pin and its
usage is discussed in Section 3.5, along with other
power consumption issues.
Additionally,
the
RP#
pin
provides
protection
against unwanted command writes due to invalid
system bus conditions that may occur during
system reset and power-up/down sequences. For
example, when the flash memory powers-up, it
automatically defaults to the read array mode, but
during
a
warm
system
reset,
where
power
continues uninterrupted to the system components,
the flash memory could remain in a non-read mode,
such as erase. Consequently, the system Reset
signal should be tied to RP# to reset the memory to
normal read mode upon activation of the Reset
signal. See Section 3.6.
The 28F400 provides both byte-wide or word-wide
input/output, which is controlled by the BYTE# pin.
Please see Table 2 and Figure 16 for a detailed
description of BYTE# operations, especially the
usage of the DQ15/A–1 pin.
The
28F400
products
are
available
in
a
ROM/EPROM-compatible pinout and housed in the
44-lead PSOP (Plastic Small Outline) package, the
48-lead TSOP (Thin Small Outline, 1.2 mm thick)
package and the 56-lead TSOP as shown in
Figures 4, 5 and
6, respectively. The 28F004
products
are available
in
the
40-lead
TSOP
package as shown in Figure 3.
Refer to the DC Characteristics Table, Section 5.2
(commercial
temperature)
and
Section
6.2
(extended temperature), for complete current and
voltage
specifications.
Refer
to
the
AC
Characteristics Table, Section 5.3 (commercial
temperature)
and
Section
6.3
(extended
temperature), for read, write and erase performance
specifications.


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