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PA28F200BX-B80 Datasheet(PDF) 3 Page - Intel Corporation |
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PA28F200BX-B80 Datasheet(HTML) 3 Page - Intel Corporation |
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3 / 48 page  28F200BX-TB 28F002BX-TB 10 PRODUCT FAMILY OVERVIEW Throughout this datasheet the 28F200BX refers to both the 28F200BX-T and 28F200BX-B devices and 28F002BX refers to both the 28F002BX-T and 28F002BX-B devices The 2-Mbit flash memory fam- ily refers to both the 28F200BX and 28F002BX prod- ucts This datasheet comprises the specifications for four separate products in the 2-Mbit flash memory family Section 1 provides an overview of the 2-Mbit flash memory family including applications pinouts and pin descriptions Sections 2 and 3 describe in detail the specific memory organizations for the 28F200BX and 28F002BX products respectively Section 4 combines a description of the family’s principles of operations Finally Section 5 describes the family’s operating specifications PRODUCT FAMILY x8x16 Products x8-Only Products 28F200BX-T 28F002BX-T 28F200BX-B 28F002BX-B 11 Designing for Upgrade to SmartVoltage Products Today’s high volume boot block products are up- gradable to Intel’s SmartVoltage boot block prod- ucts that provide program and erase operation at 5V or 12V VPP and read operation at 3V or 5V VCC Intel’s SmartVoltage boot block products provide the following enhancements to the boot block products described in this data sheet 1 DU pin is replaced by WP to provide a means to lock and unlock the boot block with logic sig- nals 2 5V ProgramErase operation uses proven pro- gram and erase techniques with 5V g10% ap- plied to VPP 3 Enhanced circuits optimize performance at 33V VCC Refer to the 2 4 or 8 Mbit SmartVoltage Boot Block Flash Memory Data Sheets for complete specifica- tions When you design with 12V VPP boot block products you should provide the capability in your board de- sign to upgrade to SmartVoltage products Follow these guidelines to ensure compatibility 1 Connect DU (WP on SmartVoltage products) to a control signal or to VCC or GND 2 If adding a switch on VPP for write protection switch to GND for complete write protection 3 Allow for connecting 5V to VPP and disconnect 12V from the VPP line if desired 12 Main Features The 28F200BX28F002BX boot block flash memory family is a very high performance 2-Mbit (2097152 bit) memory family organized as either 128 KWords (131072 words) of 16 bits each or 256 Kbytes (262144 bytes) of 8 bits each Five Separately Erasable Blocks including a hard- ware-lockable boot block (16384 Bytes) two pa- rameter blocks (8192 Bytes each) and two main blocks (1 block of 98304 Bytes and 1 block of 131072 Bytes) are included on the 2-Mbit family An erase operation erases one of the main blocks in typically 24 seconds and the boot or parameter blocks in typically 10 second Each block can be independently erased and programmed 100000 times The Boot Block is located at either the top (28F200BX-T 28F002BX-T) or the bottom (28F200BX-B 28F002BX-B) of the address map in order to accommodate different microprocessor pro- tocols for boot code location The hardware locka- ble boot block provides the most secure code stor- age The boot block is intended to store the kernel code required for booting-up a system When the RP pin is between 114V and 126V the boot block is unlocked and program and erase operations can be performed When the RP pin is at or below 65V the boot block is locked and program and erase op- erations to the boot block are ignored The 28F200BX products are available in the ROM EPROM compatible pinout and housed in the 44- Lead PSOP (Plastic Small Outline) package and the 56-Lead TSOP (Thin Small Outline 12mm thick) package as shown in Figures 3 and 4 The 28F002BX products are available in the 40-Lead TSOP (12mm thick) package as shown in Figure 5 The Command User Interface (CUI) serves as the interface between the microprocessor or microcon- troller and the internal operation of the 28F200BX and 28F002BX flash memory products Program and Erase Automation allows program and erase operations to be executed using a two- write command sequence to the CUI The internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for program and erase operations including verifications there- by unburdening the microprocessor or microcontrol- ler Writing of memory data is performed in word or byte increments for the 28F200BX family and in byte increments for the 28F002BX family typically within 9 ms which is a 100% improvement over current flash memory products 3 |
Similar Part No. - PA28F200BX-B80 |
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Similar Description - PA28F200BX-B80 |
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