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TN28F020-120 Datasheet(PDF) 9 Page - Intel Corporation

Part # TN28F020-120
Description  28F020 2048K (256K X 8) CMOS FLASH MEMORY
Download  38 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

TN28F020-120 Datasheet(HTML) 9 Page - Intel Corporation

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E
28F020
9
Table 2. 28F020 Bus Operations
Mode
VPP(1)
A0
A9
CE#
OE#
WE#
DQ0–DQ7
Read
VPPL
A0
A9
VIL
VIL
VIH
Data Out
Output Disable
VPPL
XX
VIL
VIH
VIH
Tri-State
READ-
Standby
VPPL
XX
VIH
X
X
Tri-State
ONLY
Intelligent Identifier
(Mfr)(2)
VPPL
VIL
VID(3)
VIL
VIL
VIH
Data = 89H
Intelligent Identifier
(Device)(2)
VPPL
VIH
VID(3)
VIL
VIL
VIH
Data = BDH
Read
VPPH
A0
A9
VIL
VIL
VIH
Data Out(4)
READ/
Output Disable
VPPH
XX
VIL
VIH
VIH
Tri-State
WRITE
Standby(5)
VPPH
XX
VIH
X
X
Tri-State
Write
VPPH
A0
A9
VIL
VIH
VIL
Data In(6)
NOTES:
1.
Refer to
DC Characteristics. When VPP = VPPL memory contents can be read but not written or erased.
2.
Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 3. All other
addresses low.
3.
VID is the intelligent identifier high voltage. Refer to DC Characteristics.
4.
Read operations with VPP = VPPH may access array data or the intelligent identifier codes.
5.
With VPP at high voltage, the standby current equals ICC + IPP (standby).
6.
Refer to Table 3 for valid data-in during a write operation.
7.
X can be VIL or VIH.
2.2
Write Protection
The command register is only active when VPP is
at high voltage. Depending upon the application,
the system designer may choose to make the VPP
power supply switchable—available only when
memory updates are desired. When VPP = VPPL,
the contents of the register default to the Read
command,
making
the
28F020
a
read
only
memory. In this mode, the memory contents
cannot be altered.
Or, the system designer may choose to “hardwire”
VPP, making the high voltage supply constantly
available. In this case, all command register
functions are inhibited whenever VCC is below the
write lockout voltage VLKO (see Power-Up/Down
Protection).
The
28F020
is
designed
to
accommodate
either
design
practice,
and
to
encourage optimization of the processor memory
interface.
The two step program/erase write sequence to the
command register provides additional software
write protection.
2.2.1
BUS OPERATIONS
2.2.1.1
Read
The 28F020 has two control functions, both of
which must be logically active, to obtain data at the
outputs. Chip Enable (CE#) is the power control
and should be used for device selection. Output
Enable (OE#) is the output control and should be
used
to
gate
data
from
the
output
pins,
independent of device selection. Refer to AC read
timing waveforms.
When VPP is high (VPPH), the read operation can
be used to access array data, to output the
intelligent identifier codes, and to access data for
program/erase verification. When VPP is low (VPPL),
the read operation can only access the array data.


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