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E28F016SC-95 Datasheet(PDF) 8 Page - Intel Corporation |
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E28F016SC-95 Datasheet(HTML) 8 Page - Intel Corporation |
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8 / 42 page  BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY E 8 PRELIMINARY Table 3. Pin Descriptions (Continued) Sym Type Name and Function WE# INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of the WE# pulse. RY/BY# OUTPUT READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is performing an internal operation (block erase, program, or lock-bit configuration). RY/BY#-high indicates that the WSM is ready for new commands, block erase or program is suspended, or the device is in deep power-down mode. RY/BY# is always active. VPP SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY: For erasing array blocks, programming data, or configuring lock-bits. SmartVoltage Flash → 3.3 V, 5 V, and 12 V VPP With VPP ≤ VPPLK, memory contents cannot be altered. Block erase, program, and lock-bit configuration with an invalid VPP (see DC Characteristics) produce spurious results and should not be attempted. VCC SUPPLY DEVICE POWER SUPPLY: Internal detection automatically configures the device for optimized read performance. Do not float any power pins. SmartVoltage Flash → 2.7 V (Read-Only), 3.3 V, and 5 V VCC With VCC ≤ VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid VCC voltages (see DC Characteristics) produce spurious results and should not be attempted. Block erase, program, and lock-bit configuration operations with VCC < 3.0 V are not supported. GND SUPPLY GROUND: Do not float any ground pins. NC NO CONNECT: Lead is not internally connected; it may be driven or floated. |
Similar Part No. - E28F016SC-95 |
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Similar Description - E28F016SC-95 |
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