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E28F010-90 Datasheet(PDF) 1 Page - Intel Corporation |
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E28F010-90 Datasheet(HTML) 1 Page - Intel Corporation |
1 / 33 page E December 1997 Order Number: 290207-012 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µs Typical Byte-Program 2 Second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read 90 ns Maximum Access Time n CMOS Low Power Consumption 10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface n Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience n JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec., Order #231369) n Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on- board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs. Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse programming and quick-erase algorithms. Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from –1 V to VCC + 1 V. With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness. 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
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