TE28F016C3B90 datasheet(5/59 Pages) INTEL

Part #	TE28F016C3B90

Description	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

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Manufacturer	INTEL [Intel Corporation]

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E

3 VOLT ADVANCED+ BOOT BLOCK

5

PRODUCT PREVIEW

1.0

INTRODUCTION

This document contains the specifications for the

3 Volt Advanced+ Boot Block flash memory family.

These flash memories add features which can be

used to enhance the security of systems: instant

block locking and a protection register.

Throughout this document, the term “2.7 V” refers

to the full voltage range 2.7 V–3.6 V (except where

noted otherwise) and “VPP = 12 V” refers to 12 V

±5%. Sections 1 and 2 provide an overview of the

flash memory family including applications, pinouts,

pin descriptions and memory organization. Section

3 describes the operation of these products. Finally,

Section 4 contains the operating specifications.

1.1

3 Volt Advanced+ Boot Block

Flash Memory Enhancements

The 3 Volt Advanced+ Boot Block flash memory

features:

• Zero-latency, flexible block locking

• 128-bit Protection Register

• Simple system implementation for 12 V

production programming with 2.7 V

in-field

programming

• Ultra-low power operation at 2.7 V

• Minimum 100,000 block erase cycles

• Common Flash Interface for software query of

device specs and features

Table 1. 3 Volt Advanced+ Boot Block Feature Summary

Feature

8 M(2)

16 M

32 M(1)

8 M(2)

16 M

32 M

Reference

VCC Operating Voltage

2.7 V – 3.6 V

Table 8

VPP Voltage

Provides complete write protection with

optional 12V Fast Programming

Table 8

VCCQ I/O Voltage

2.7 V– 3.6 V

Note 3

Bus Width

8-bit

16-bit

Table 2

Speed (ns)

90, 110 @ 2.7 V and 80, 100 @ 3.0 V

Table 11

Blocking (top or bottom)

8 x 8-Kbyte parameter

4-Mb: 7 x 64-Kbyte main

8-Mb: 15 x 64-Kbyte main

16-Mb: 31 x 64-Kbyte main

32-Mb: 63 x 64-Kbyte main

8 x 4-Kword parameter

4-Mb: 7 x 32-Kword main 8-

Mb: 15 x 32-Kword main

16-Mb: 31 x 32-Kword main

32-Mb: 63 x 32-Kword main

Section 2.2

Appendix E and F

Operating Temperature

Extended: –40 °C to +85 °C

Table 8

Program/Erase Cycling

100,000 cycles

Table 8

Packages

40-Lead TSOP(1)

48-Ball

µBGA* CSP(2)

48-Lead TSOP

48-Ball

µBGA* CSP(2)

Figures 1, 2, 3,

and 4

Block Locking

Flexible locking of any block with zero latency

Section 3.3

Protection Register

64-bit unique device number, 64-bit user programmable

Section 3.4

NOTES:

1.

32-Mbit density not available in 40-lead TSOP.

2.

8-Mbit density not available in µBGA* CSP.

3.

VCCQ operation at 1.65 V — 2.5 V available upon request.

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TE28F016C3B90 Datasheet(PDF) 5 Page - Intel Corporation

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