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IDT7M1014S15GB Datasheet(PDF) 3 Page - Integrated Device Technology |
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IDT7M1014S15GB Datasheet(HTML) 3 Page - Integrated Device Technology |
3 / 8 page 7.03 3 IDT7M1014 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES ABSOLUTE MAXIMUM RATINGS (1) Symbol Rating Commercial Military Unit VTERM(2) Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V with Respect to GND VTERM(3) Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V TA Operating 0 to +70 –55 to +125 °C Temperature TBIAS Temperature –10 to +85 –65 to +135 °C Under Bias TSTG Storage –55 to +125 –65 to +150 °C Temperature IOUT DC Output 50 50 mA Current NOTES: 2819 tbl 02 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Inputs and VCC terminals only. 3. I/O terminals only. RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Ambient Grade Temperature GND VCC Military –55 °C to +125°C 0V 5.0V ± 10% Commercial 0 °C to +70°C 0V 5.0V ± 10% 2819 tbl 04 RECOMMENDED DC OPERATING CONDITIONS Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V GND Supply Voltage 0 0 0 V VIH Input HIGH Voltage 2.2 — 6.0 V VIL Input LOW Voltage –0.5 (1) — 0.8 V NOTE: 2819 tbl 03 1. VIL ≥ –3.0V for pulse width less than 20ns. CAPACITANCE TABLE (TA = +25 °C, f = 1.0MHz) Symbol Parameter Conditions Max. Unit C_IN(1) Input Capacitance (Address) V_IN = 0V 50 pF C_IN(2) Input Capacitance (Data, R/ W)V_IN = 0V 15 pF C_IN(3) Input Capacitance ( OE)V_IN = 0V 25 pF COUT Output Capacitance (Data) V_OUT = 0V 15 pF NOTE: 2819 tbl 05 1. This parameter is guaranteed by design but not tested. |
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