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IDT74FCT299ATE Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDT74FCT299ATE Datasheet(HTML) 2 Page - Integrated Device Technology |
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2 / 7 page  6.11 2 IDT54/74FCT299T/AT/CT FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES PIN CONFIGURATIONS LCC TOP VIEW 5 6 7 8 S0 OE1 1 2 3 4 20 19 18 17 16 15 14 13 Vcc P20-1 D20-1 SO20-2 SO20-8 & E20-1 OE2 I/O6 I/O4 I/O2 GND S1 DS7 Q7 I/O7 I/O5 I/O I/O1 I/O0 Q0 MR 9 10 12 11 3 CP DS0 FUNCTION TABLE (1) Inputs MR MR S1 S0 CP Response L X X X Asynchronous Reset Q0–Q7 = LOW HH H ↑ Parallel Load; I/On → Qn HL H ↑ Shift Right; DS0 → Q0, Q0 → Q1, etc. HH L ↑ Shift Left; DS7 → Q7, Q7→ Q6, etc. H L L X Hold NOTE: 2632 tbl 02 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don’t Care ↑ = LOW-to-HIGH clock transition PIN DESCRIPTION Pin Names Description CP Clock Pulse Input (Active Edge Rising) DS0 Serial Data Input for Right Shift DS7 Serial Data Input for Left Shift S0, S1 Mode Select Inputs MR Asynchronous Master Reset Input (Active LOW) OE1, OE2 3-State Output Enable Inputs (Active LOW) I/O0–I/O7 Parallel Data Inputs or 3-State Parallel Outputs O0, O7 Serial Outputs 2632 tbl 01 Symbol Parameter(1) Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 6 10 pF COUT Output Capacitance VOUT = 0V 8 12 pF 2632 lnk 04 NOTE: 1. This parameter is measured at characterization but not tested. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT- INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals only. 3. Outputs and I/O terminals only. Symbol Rating Commercial Military Unit VTERM(2) Terminal Voltage with Respect to GND –0.5 to +7.0 –0.5 to +7.0 V VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC +0.5 –0.5 to VCC +0.5 V TA Operating Temperature 0 to +70 –55 to +125 °C TBIAS Temperature Under Bias –55 to +125 –65 to +135 °C TSTG Storage Temperature –55 to +125 –65 to +150 °C PT Power Dissipation 0.5 0.5 W IOUT DC Output Current –60 to +120 –60 to +120 mA 2632 lnk 03 ABSOLUTE MAXIMUM RATINGS (1) CAPACITANCE (TA = +25 °C, f = 1.0MHz) 2632 drw 02 DIP/SOIC/QSOP/CERPACK TOP VIEW 2632 drw 03 4 5 6 7 8 L20-2 18 17 16 15 14 INDEX I/O6 I/O4 I/O2 I/O0 Q0 DS7 Q7 I/O7 I/O5 I/O3 9 10 11 12 13 32 1 20 19 |
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