tm

December 2007

©2007 Fairchild Semiconductor Corporation

FDD5N50F Rev. A1

www.fairchildsemi.com

1

UniFET

TM

FDD5N50F

N-Channel MOSFET, FRFET

500V, 3.5A, 1.55

Ω

Features

• Low gate charge ( Typ. 11nC)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pluse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power suppliesand active power factor-

correction.

D

G

S

G

S

D

D-PAK

Thermal Characteristics

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

500

V

Gate to Source Voltage

±30

V

Drain Current

3.5

A

2.1

Drain Current

- Pulsed

(Note 1)

14

A

Single Pulsed Avalanche Energy

(Note 2)

257

mJ

Avalanche Current

(Note 1)

3.5

A

Repetitive Avalanche Energy

(Note 1)

4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

40

W

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

Ratings

Units

Thermal Resistance, Junction to Case

1.4

Thermal Resistance, Junction to Ambient

110