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FDD5N50F Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD5N50F Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page tm December 2007 ©2007 Fairchild Semiconductor Corporation FDD5N50F Rev. A1 www.fairchildsemi.com 1 UniFET TM FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55 Ω Features •RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- correction. D G S G S D D-PAK MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 3.5 A -Continuous (TC = 100oC) 2.1 IDM Drain Current - Pulsed (Note 1) 14 A EAS Single Pulsed Avalanche Energy (Note 2) 257 mJ IAR Avalanche Current (Note 1) 3.5 A EAR Repetitive Avalanche Energy (Note 1) 4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 40 W - Derate above 25oC0.3 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 1.4 oC/W RθJA Thermal Resistance, Junction to Ambient 110 |
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