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IDT7210L40JB Datasheet(PDF) 5 Page - Integrated Device Technology

Part # IDT7210L40JB
Description  16 x 16 PARALLEL CMOS MULTIPLIER-ACCUMULATOR
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7210L40JB Datasheet(HTML) 5 Page - Integrated Device Technology

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11.2
5
IDT7210L
16 x 16 PARALLEL CMOS MULTIPLIER-ACCUMULATOR
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 5.0V
± 10%, TA = 0°C to +70°C; Military: VCC = 5V ± 10%, TA = –55°C to +125°C)
AC ELECTRICAL CHARACTERISTICS MILITARY (VCC = 5V
± 10%, TA = –55° to +125°C)
NOTES:
2577 tbl 07
1. Transition is measured
±500mV from steady state voltage.
2. Minimum delays guaranteed but not tested
NOTES:
2577 tbl 05
1. Typical implies VCC = 5V and TA = +25
°C.
2. ICC is measured at 10MHz and VIN = 0 to 3V. For frequencies greater than 10MHz, the following equation is used for the commercial range:
ICC = 90+ 6(f –10)mA, where f = operating frequency in MHz. For the military range, ICC = 110 + 8(f –10). f = operating frequency in MHz, f = 1/tMA.
3. For frequencies greater than 10MHz, guaranteed by design, not production tested.
4. IOL = 4mA for tMA > 55ns.
5. For conditions shown as Max. or Min., use appropriate value specified under electrical characteristics.
AC ELECTRICAL CHARACTERISTICS COMMERCIAL (VCC = 5V
± 10%, TA = 0° to +70°C)
NOTES:
2577 tbl 06
1. Transition is measured
±500mV from steady state voltage.
2. Minimum delays guaranteed but not tested
Commercial
Military
Symbol
Parameter
Test Conditions(5)
Min.
Typ.(1)
Max.
Min.
Typ.(1)
Max.
Unit
VIH
Input High Voltage
Guaranteed Logic HIGH Level
2.0
2.0
V
VIL
Input Low Voltage
Guaranteed Logic LOW Level
0.8
0.8
V
|ILI|
Input Leakage Current
VCC = Max., VIN = 0V to VCC
——10
——10
µA
|ILO|
Output Leakage Current
VCC = Max., Outputs Disabled
VOUT = 0 to VCC
——10
——10
µA
VOH
Output HIGH Voltage
VCC = Min., IOH = –2.0mA
2.4
2.4
V
VOL(4)
Output LOW Voltage
VCC = Min., IOL = 4mA
0.4
0.4
V
IOS
Output Short Circuit Current
VCC = Max., V0 GND
-20
-100
-20
-100
mA
ICC(2)
Operating Power Supply Current
VCC = Max., Outputs Enabled
f= 10MHz(2)
CL = 50 pF
45
90
45
110
mA
ICCQ1
Quiescent Power Supply Current
VIN
≥ VIH, VIN ≤ VIL
20
30
20
30
mA
ICCQ2
Quiescent Power Supply Current
VIN
≥ VCC –0.2V, V IN ≤ 0.2V
4
10
4
12
mA
ICC/f(2,3) Increase in Power Supply
Current MHz
VCC = Max., Outputs Disabled
6
8
mA/
MHz
7210L25
7210L30
7210L40
7210L55
7210L65
7210L75
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tMA
Multiply-Accumulate Time(2)
2.0
25
2.0
30
2.0
40
2.0
55
2.0
65
2.0
75
ns
tD
Output Delay(2)
2.0
20
2.0
20
2.0
25
2.0
30
2.0
35
2.0
35
ns
tENA
3-State Enable Time
20
20
25
30
30
35
ns
tDIS
3-State Disable Time(1)
20
20
25
25
30
30
ns
tS
Input Register Set-up Time
12
12
15
20
25
25
ns
tH
Input Register Hold Time
3
3–3–3–3–3
–ns
tPW
Clock Pulse Width
10
10
15
20
25
25
ns
tHCL
Relative Hold Time
0
0–0–0–0–0
–ns
7210L20
7210L25
7210L35
7210L45
7210L55
7210L65
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tMA
Multiply-Accumulate Time(2)
2.0
20
2.0
25
2.0
35
2.0
45
2.0
55
2.0
65
ns
tD
Output Delay(2)
2.0
18
2.0
20
2.0
25
2.0
25
2.0
30
2.0
35
ns
tENA
3-State Enable Time
18
20
25
25
30
30
ns
tDIS
3-State Disable Time(1)
18
20
25
25
30
30
ns
tS
Input Register Set-up Time
10
12
12
15
20
25
ns
tH
Input Register Hold Time
3
3–3–3–3–3
–ns
tPW
Clock Pulse Width
9
10
10
15
20
25
ns
tHCL
Relative Hold Time
0
0–0–0–0–0
–ns


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