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IDT71V424L15Y Datasheet(PDF) 6 Page - Integrated Device Technology |
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IDT71V424L15Y Datasheet(HTML) 6 Page - Integrated Device Technology |
6 / 9 page 6.42 6 IDT71V424S, IDT71V424L, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 2(1, 2, 4) NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. Transition is measured ±200mV from steady state. Timing Waveform of Read Cycle No. 1(1) ADDRESS 3622 drw 06 OE CS DATAOUT (5) (5) (5) (5) DATAOUT VALID HIGH IMPEDANCE tAA tRC tOE tACS tOLZ tCHZ tCLZ (3) tOHZ VCC SUPPLY CURRENT tPU tPD ICC ISB DATAOUT ADDRESS 3622 drw 07 tRC tAA tOH tOH DATAOUT VALID PREVIOUS DATAOUT VALID |
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