May 2014

©2014 Fairchild Semiconductor Corporation

FDMA86265P Rev.C

www.fairchildsemi.com

1

D

D

S

G

D

D

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

Bottom Drain Con-

D

D

D

D

S

G

Bottom Drain Contact

FDMA86265P

-150 V, -1 A, 1.2

Ω

Features

Low Profile - 0.8 mm maximum in the new package MicroFET

2x2 mm

Very low RDS-on mid voltage P-channel silicon technology

optimised for low Qg

This product is optimised for fast switching applications as

well as load switch applications

100% UIL tested

RoHS Compliant

General Description

This

P-Channel

MOSFET

is

produced

using

Fairchild

Semiconductor‘s

advanced

process

that

has been optimized for the on-state resistance and yet maintain

superior switching performance.

Applications

Active Clamp Switch

Load Switch

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

-150

V

Gate to Source Voltage

±25

V

Drain Current -Continuous

(Note 1a)

-1

A

-Pulsed

-2

Single Pulse Avalanche Energy

(Note 3)

6

mJ

Power Dissipation

(Note 1a)

2.4

W

Power Dissipation

(Note 1b)

0.9

Operating and Storage Junction Temperature Range

-55 to + 150

°C

Thermal Resistance, Junction to Ambient

(Note 1a)

52

°C/W

Thermal Resistance, Junction to Ambient

(Note 1b)

145

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

265

FDMA86265P

MicroFET 2X2

7 ’’

12 mm

3000 units