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FDI9406_F085 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDI9406_F085 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDI9406_F085 Rev. C3 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V IDSS Drain-to-Source Leakage Current VDS=40V, TJ = 25oC - - 1 μA VGS = 0V TJ = 175oC(Note 4) - - 1 mA IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate-to-Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 2.83 4.0 V RDS(on) Drain-to-Source On Resistance ID = 80A, VGS= 10V TJ = 25oC - 1.73 2.2 m Ω TJ = 175oC(Note 4) - 2.86 3.2 m Ω Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 7710 - pF Coss Output Capacitance - 2015 - pF Crss Reverse Transfer Capacitance - 140 - pF Rg Gate Resistance f = 1MHz - 2.7 - Ω Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 32V ID = 80A - 107 138 nC Qg(th) Threshold Gate Charge VGS = 0 to 2V - 14 19 nC Qgs Gate-to-Source Gate Charge -33 - nC Qgd Gate-to-Drain “Miller“ Charge - 18 - nC Switching Characteristics Drain-Source Diode Characteristics Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. ton Turn-On Time VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω - - 160 ns td(on) Turn-On Delay - 32 - ns tr Rise Time - 81 - ns td(off) Turn-Off Delay - 50 - ns tf Fall Time - 23 - ns toff Turn-Off Time - - 93 ns VSD Source-to-Drain Diode Voltage ISD = 80A, VGS = 0V - - 1.25 V trr Reverse-Recovery Time IF = 80A, dISD/dt = 100A/μs, VDD=32V - 85 110 ns Qrr Reverse-Recovery Charge - 122 160 nC |
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