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FDB8870_F085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDB8870_F085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 11 page  FDB8870_F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features •rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A •rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 160 A Continuous (TC = 25 oC, V GS = 10V) (Note 1) Continuous (TC = 25 oC, V GS = 4.5V) (Note 1) 150 A Continuous (Tamb = 25 oC, V GS = 10V, with R θJA = 43 oC/W) 23 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 2) 300 mJ PD Power dissipation 160 W Derate above 25oC1.07 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-263 0.94 oC/W RθJA Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 oC/W RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43 oC/W Device Marking Device Package Reel Size Tape Width Quantity D G S TO-263AB FDB SERIES GATE SOURCE DRAIN (FLANGE) July 2010 FDB8870 FDB8870_F085 TO-263AB 330mm 24mm 800 units ©2010Fairchild Semiconductor Corporation FDB8870_F085 Rev. A RoHS Compliant • Qualified to AEC Q101 S • High power and current handling capability • |
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