IDT70824S35PFI datasheet(5/21 Pages) IDT

Part #	IDT70824S35PFI

Description	HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM??

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Manufacturer	IDT [Integrated Device Technology]

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5 / 21 page

6.42

IDT70824S/L

High-Speed 4K x 16 Sequential Access Random Access Memory

Military and Commercial Temperature Ranges

5

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range(1,2,8)(VCC = 5.0V ± 10%)

Data Retention Characteristics Over All Temperature Ranges

(L Version Only) (VLC < 0.2V, VHC > VCC - 0.2V)

NOTES

1. 'X' in part number indicates power rating (S or L).

2. VCC = 5V, TA = +25°C; guaranteed by device characterization but not production tested.

3. At f = fMAX, address, control lines (except Output Enable), and SCLK are cycling at the maximum frequency read cycle of 1/tRC.

4. f = 0 means no address or control lines change.

5.

SCE may transition, but is Low (SCE=VIL) when clocked in by SCLK.

6.

SCE may be - 0.2V, after it is clocked in, since SCLK=VIH must be clocked in prior to powerdown.

7. If one port is enabled (either

CE or SCE = LOW) then the other port is disabled (SCE or CE = HIGH, respectively). CMOS HIGH > Vcc - 0.2V and LOW < 0.2V, and

TTL HIGH = VIH and LOW = VIL.

8. Industrial temperature: for specific speeds, packages and powers contact your sales office.

NOTES :

1. TA = +25°C, VCC = 2V; guaranteed by device characterization but not production tested.

2. tRC = Read Cycle Time

3. This parameter is guaranteed by device characterization, but is not production tested.

4. To initiate data retention,

SCE = VIH must be clocked in.

70824X20

Com'l Only

70824X25

Com'l Only

70824X35

Com'l &

Military

70824X45

Com'l &

Military

Symbol

Parameter

Test Condition

Version

Typ.

(2)

Max.

Typ.

(2)

Max.

Typ.

(2)

Max.

Typ.

(2)

Max.

Unit

ICC

Dynamic Operating

Current

(Both Ports Active)

CEL and CER = VIL,

Outputs Open

SCE = VIL(5)

f = fMAX

(3)

COM'L

S

L

180

380

330

170

360

310

160

340

290

155

340

290

mA

MIL &

IND

S

L

____

160

400

340

155

400

340

ISB1

Standby Current

(Both Ports - TTL

Level Inputs)

SCE and CE = VIH(7)

CMD = VIH

f = fMAX

(3)

COM'L

S

L

25

70

50

25

70

50

20

70

50

16

70

50

mA

MIL &

IND

S

L

____

20

85

65

16

85

65

ISB2

Standby Current

(One Port - TTL

Level Inputs)

CE or SCE = VIH

Active Port Outputs Open,

f=fMAX

(3)

COM'L

S

L

115

260

230

105

250

220

95

240

210

90

240

210

mA

MIL &

IND

S

L

____

95

290

250

90

290

250

ISB3

Full Standby Current

(Both Ports -

CMOS Level Inputs)

Both Ports

CE and

SCE > VCC - 0.2V(6)

VIN > VCC - 0.2V or

VIN < 0.

2V,

f = 0

(4)

COM'L

S

L

1.0

0.2

15

5

1.0

0.2

15

5

1.0

0.2

15

5

1.0

0.2

15

5

mA

MIL &

IND

S

L

____

1.0

0.2

30

10

1.0

0.2

30

10

ISB4

Full Standby Current

(One Port -

CMOS Level Inputs)

One Port

CE or

SCE > VCC - 0.2V(6,7)

Outputs Open (Active Port)

f = fMAX

(3)

VIN > VCC - 0.2V or VIN < 0.2V

COM'L

S

L

110

240

200

100

230

190

90

220

180

85

220

180

mA

MIL &

IND

S

L

____

90

260

215

85

260

215

3099 tbl 08

Symbol

Parameter

Test Condition

Min.

Typ.

(1)

Max.

Unit

VDR

VCC for Data Retention

VCC = 2V

2.0

___

V

ICCDR

Data Retention Current

CE = VHC

VIN = VHC or = VLC

MIL. & IND.

___

100

4000

µA

COM'L.

___

100

1500

tCDR

(3)

Chip Deselect to Data Retention Time

SCE = VHC(4) when SCLK = u

CMD > VHC

___

V

tR(

3)

Operation Recovery Time

tRC

(2)

___

V

3099 tbl 09

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