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IDT71T024L200PZ Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT71T024L200PZ Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 8 page 7 IDT71T024 LOW POWER 2V CMOS STATIC RAM 1 MEG (128K x 8-BIT) COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES TIMING WAVEFORM OF WRITE CYCLE NO. 1 ( WE WE CONTROLLED TIMING) (1, 2, 5) ADDRESS CS1 WE CS2 DATAOUT DATAIN 3779 drw 09 (6) (7) (6) (6) DATAIN VALID HIGH IMPEDANCE tWC tAW tAS tWHZ tWP tCHZ tOW tDW tDH tCW (3) tWR (4) (4) CS1 ADDRESS WE CS2 DATAIN 3779 drw 10 tAW tWC tCW tAS tWR tDW tDH (3) DATAIN VALID TIMING WAVEFORM OF WRITE CYCLE NO. 2 ( CS1 CS1 AND CS2 CONTROLLED TIMING) (1,2,5) NOTES: 1. WE or CS1 must be HIGH, or CS2 must be LOW during all address transitions. 2. A write occurs during the overlap of a LOW CS1, HIGH CS2, and a LOW WE. 3. tWR is measured from the earlier of either CS1 or WE going HIGH or CS2 going LOW to the end of the write cycle. 4. During this period, I/O pins are in the output state, and input signals must not be applied. 5. If the CS1 LOW transition or CS2 HIGH transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. 6. Transition is measured ±200mV from steady state. 7. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP. |
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