4

IDT71T016

LOW POWER 2V CMOS STATIC RAM 1 MEG (64K x 16-BIT)

COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

Symbol

Parameter

Test Condition

Min.

Typ.

(1)

Max.

Unit

—

1.5

—

—

V

Data Retention Current

—

<1

5

µA

(3)

Chip Deselect to Data

0—

—

ns

Retention Time

(3)

Operation Recovery Time

(2)

——

ns

NOTES:

3777 tbl 09

°C.

3. This parameter is guaranteed by device characterization, but is not production tested.

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

3ns

Input Timing Reference Levels

Output Reference Levels

AC Test Load

See Figure 1

3777 tbl 09

3777 drw 05

DATA

RETENTION

MODE

1.8V

1.8V

≥ 1.5V

CS

3777 drw 04

3070

Ω

3150

Ω

50pF*

AC TEST LOAD

*Including jig and scope capacitance.

Figure 1. AC Test Load