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IDT70V06S15G Datasheet(PDF) 10 Page - Integrated Device Technology |
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IDT70V06S15G Datasheet(HTML) 10 Page - Integrated Device Technology |
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10 / 22 page  10 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. This parameter is guaranteed but not tested. 3. To access SRAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part number indicates power rating (S or L). Symbol Parameter 70V06X15 Com'l Only 70V06X20 Com'l & Ind 70V06X25 Com'l & Ind Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 15 ____ 20 ____ 25 ____ ns tEW Chip Enable to End-of-Write (3) 12 ____ 15 ____ 20 ____ ns tAW Address Valid to End-of-Write 12 ____ 15 ____ 20 ____ ns tAS Address Set-up Time (3) 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 12 ____ 15 ____ 20 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 15 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 12 ____ 15 ns tDH Data Hold Time (4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 10 ____ 12 ____ 15 ns tOW Output Active from End-of-Write (1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 2942 tbl 12a Symbol Parameter 70V06X35 Com'l & Ind 70V06X55 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write(3) 30 ____ 45 ____ ns tAW Address Valid to End-of-Write 30 ____ 45 ____ ns tAS Address Set-up Time (3) 0 ____ 0 ____ ns tWP Write Pulse Width 25 ____ 40 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 30 ____ ns tHZ Output High-Z Time (1,2) ____ 15 ____ 25 ns tDH Data Hold Time(4) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z (1,2) ____ 15 ____ 25 ns tOW Output Active from End-of-Write (1,2,4) 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 2942 tbl 12b |
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