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IDT7164S20Y Datasheet(PDF) 4 Page - Integrated Device Technology |
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IDT7164S20Y Datasheet(HTML) 4 Page - Integrated Device Technology |
4 / 9 page ![]() 6.1 4 IDT7164S/L CMOS STATIC RAM 64K (8K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%) IDT7164S IDT7164L Symbol Parameter Test Condition Min. Max. Min. Max. Unit |ILI| Input Leakage Current VCC = Max., MIL. — 10 — 5 µA VIN = GND to VCC COM’L. — 5 — 2 |ILO| Output Leakage Current VCC = Max., CS1 = VIH, MIL. — 10 — 5 µA VOUT = GND to VCC COM’L. — 5 — 2 VOL Output Low Voltage IOL = 8mA, VCC = Min. 0.4 — 0.4 V IOL = 10mA, VCC = Min. — 0.5 — 0.5 VOH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — 2.4 — V AC TEST CONDITIONS Input Pulse Levels GND to 3.0V Input Rise/Fall Times 5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V AC Test Load See Figures 1 and 2 2967 tbl 10 *Includes scope and jig capacitances Figure 2. AC Test Load (for tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2, tOHZ, tOW, and tWHZ) Figure 1. AC Test Load DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES (L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V) Typ. (1) Max. VCC @VCC @ Symbol Parameter Test Condition Min. 2.0v 3.0V 2.0V 3.0V Unit VDR VCC for Data Retention — 2.0 — — — — V ICCDR Data Retention Current MIL. — 10 15 200 300 µA COM’L. — 10 15 60 90 tCDR (3) Chip Deselect to Data 1. CS1 ≥ VHC 0— — — — ns Retention Time CS2 ≥ VHC, or tR (3) Operation Recovery Time 2. CS2 ≤ VLC tRC (2) —— —— ns |ILI| (3) Input Leakage Current — — — 2 2 µA NOTES: 2967 tbl 09 1. TA = +25 °C. 2. tRC = Read Cycle Time. 3. This parameter is guaranteed by device characterization, but is not production tested. 2967 drw 03 480 Ω 30pF* 255 Ω DATA OUT 5V 2967 drw 04 480 Ω 5pF* 255 Ω DATA OUT 5V 2967 tbl 08 |
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