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IDT6198S20Y Datasheet(PDF) 6 Page - Integrated Device Technology |
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IDT6198S20Y Datasheet(HTML) 6 Page - Integrated Device Technology |
6 / 8 page 6.3 6 IDT6198S/L CMOS STATIC RAM 64K (16K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF READ CYCLE NO. 2 (1, 2, 4) ADDRESS DATAOUT 2987 drw 08 tRC tAA tOH tOH DATA VALID PREVIOUS DATA VALID TIMING WAVEFORM OF READ CYCLE NO. 3 (1, 3, 4) DATAOUT CS ICC ISB VCC SUPPLY CURRENT 2987 drw 09 tACS (5) tCLZ tCHZ tPD tPU (5) DATA VALID NOTES: 1. WE is HIGH for Read cycle. 2. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. OE is LOW. 5. Transition is measured ±200mV from steady state voltage. AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges) 6198S15 (1) 6198S20 6198S25 6198S35 6198S45/55 (2) 6198S70/85(2) 6198L15 (1) 6198L20 6198L25 6198L35 6198L45/55 (2) 6198L70/85(2) Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Write Cycle tWC Write Cycle Time 14 — 17 — 20 — 30 — 40/50 — 60/75 — ns tCW Chip Select to End-of-Write 14 — 17 — 20 — 25 — 35/50 — 60/75 — ns tAW Address Valid to End-of-Write 14 — 17 — 20 — 25 — 35/50 — 60/75 — ns tAS Address Set-up Time 0 — 0 — 0 — 0 — 0 — 0 — ns tWP Write Pulse Width 14 — 17 — 20 — 25 — 35/50 — 60/75 — ns tWR Write Recovery Time 0 — 0 — 0 — 0 — 0 — 0 — ns tWHZ (3) Write Enable to Output in High-Z — 5 — 6 — 7 — 10 — 15/25 — 30/40 ns tDW Data Valid to End-of-Write 10 — 10 — 13 — 15 — 20/25 — 30/35 — ns tDH Data Hold Time 0 — 0 — 0 — 0 — 0 — 0 — ns tOW (3) Output Active from End-of-Write 5 — 5 — 5 — 5 — 5 — 5 — ns NOTES: 2987 tbl 12 1. 0 ° to +70°C temperature range only. 2. –55 °C to +125°C temperature range only. 3. This parameter is guaranteed by device characterization, but is not production tested. |
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