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IDT7007S35PFB Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT7007S35PFB Datasheet(HTML) 9 Page - Integrated Device Technology |
9 / 21 page 9 IDT7007S/L High-Speed 32K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges Timing of Power-Up Power-Down Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. tRC R/ W CE ADDR tAA OE 2940 drw 07 (4) tACE (4) tAOE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) CE 2940 drw 08 tPU ICC ISB tPD , |
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