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IDT6116SA35TP Datasheet(PDF) 4 Page - Integrated Device Technology |
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IDT6116SA35TP Datasheet(HTML) 4 Page - Integrated Device Technology |
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4 / 11 page  4 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges NOTES: 1. TA = + 25°C 2. tRC = Read Cycle Time. 3. This parameter is guaranteed by device characterization, but is not production tested. DC Electrical Characteristics(1)(continued) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V) NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing. Data Retention Characteristics Over All Temperature Ranges (LA Version Only) (VLC = 0.2V, VHC = VCC 0.2V) Symbol Parameter Power 6116SA45 6116LA45 6116SA55 6116LA55 6116SA70 6116LA70 6116SA90 6116LA90 6116SA120 6116LA120 6116SA150 6116LA150 Unit Com'l & Ind Mil Mil Only Mil Only Mil Only Mil Only Mil Only ICC1 Operating Power Supply Current, CS < VIL, Outputs Open VCC = Max., f = 0 SA 80 90 90 90 90 90 90 mA LA 75 85 85 85 85 85 85 ICC2 Dynamic Operating Current, CS < VIL, Outputs Open VCC = Max., f = fMAX (2) SA 100 100 100 100 100 100 90 mA LA 90 95 90 90 85 85 85 ISB Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., f = fMAX (2) SA 25 25 25 25 25 25 25 mA LA 20 20 20 20 25 15 15 ISB1 Full Standby Power Supply Current (CMOS Level), CS > VHC, VCC = Max., VIN < VLC or VIN > VHC, f = 0 SA 2 10 10 101010 10 mA LA 0.1 0.9 0.9 0.9 0.9 0.9 0.9 3089 tbl 09 Typ. (1) VCC @ Max. VCC @ Symbol Parameter Test Condition Min. 2.0V 3.0V 2.0V 3.0V Unit VDR VCC for Data Retention ____ 2.0 ____ ____ ____ ____ V ICCDR Data Retention Current MIL. COM'L. ____ ____ 0.5 0.5 1.5 1.5 200 20 300 30 µA tCDR (3) Chip Deselect to Data Retention Time CS > VHC VIN > VHC or < VLC ____ 0 ____ ____ ____ ns tR (3) Operation Recovery Time tRC (2) ____ ____ ____ ____ ns IILII Input Leakage Current ____ ____ ____ 22 µA 3089 tbl 10 |
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