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IDT71256S Datasheet(PDF) 4 Page - Integrated Device Technology

Part No. IDT71256S
Description  CMOS STATIC RAM 256K (32K x 8-BIT)
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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 4 page
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7.2
4
IDT71256 S/L
CMOS STATIC RAM 256K (32K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
AC Test Load
See Figures 1 and 2
2946 tbl 08
Figure 1. AC Test Load
Figure 2. AC Test Load
(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, tWHZ)
*Includes scope and jig capacitances
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) VLC = 0.2V, VHC = VCC – 0.2V
Typ.
(1)
Max.
VCC @VCC @
Symbol
Parameter
Test Condition
Min.
2.0v
3.0V
2.0V
3.0V
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
MIL.
500
800
µA
COM’L.
120
200
tCDR
Chip Deselect to Data
CS ≥ VHC
0—
ns
Retention Time
tR
(3)
Operation Recovery Time
tRC
(2)
——
——
ns
NOTES:
2946 tbl 10
1. TA = +25
°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed, but not tested.
DC ELECTRICAL CHARACTERISTICS
VCC = 5.0V
± 10%
IDT71256S
IDT71256L
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
|ILI|
Input Leakage Current
VCC = Max.,
MIL.
10
5
µA
VIN = GND to VCC
COM’L.
5
2
|ILO|
Output Leakage Current
VCC = Max.,
CS = VIH,
MIL.
10
5
µA
VOUT = GND to VCC
COM’L.
5
2
VOL
Output Low Voltage
IOL = 8mA, VCC = Min.
0.4
0.4
V
IOL = 10mA, VCC = Min.
0.5
0.5
VOH
Output High Voltage
IOH = –4mA, VCC = Min.
2.4
2.4
V
2946 tbl 09
2946 drw 05
480
5pF*
255
DATAOUT
5V
2946 drw 04
480
30pF*
255
DATAOUT
5V




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