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IDT71028S70 Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDT71028S70 Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 7 page 2 IDT71028S70 CMOS STATIC RAM 1 MEG (256K x 4-BIT) COMMERCIAL TEMPERATURE RANGE ABSOLUTE MAXIMUM RATINGS (1) Symbol Rating Com’l. Unit VTERM (2) Terminal Voltage with –0.5 to +7.0 V Respect to GND TA Operating Temperature 0 to +70 °C TBIAS Temperature Under –55 to +125 °C Bias TSTG Storage Temperature –55 to +125 °C PT Power Dissipation 1.25 W IOUT DC Output Current 50 mA NOTES: 3569 tbl 02 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC + 0.5V. PIN CONFIGURATION RECOMMENDED DC OPERATING CONDITIONS Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V GND Supply Voltage 0 0 0 V VIH Input High Voltage 2.2 — VCC+0.5 V VIL Input Low Voltage –0.5 (1) — 0.8 V NOTE: 3569 tbl 04 1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle. (3) DC ELECTRICAL CHARACTERISTICS VCC = 5.0V ± 10% IDT71028 Symbol Parameter Test Condition Min. Max. Unit |ILI| Input Leakage Current VCC = Max., VIN = GND to VCC — 5 µA |ILO| Output Leakage Current VCC = Max., CS = VIH, VOUT = GND to VCC — 5 µA VOL Output Low Voltage IOL = 8mA, VCC = Min. — 0.4 V VOH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — V 3569 tbl 05 SOJ TOP VIEW TRUTH TABLE (1,2) CS CS OE OE WE WE I/O Function L L H DATAOUT Read Data L X L DATAIN Write Data L H H High-Z Output Disabled H X X High-Z Deselected - Standby (ISB) VHC X X High-Z Deselected - Standby (ISB1) NOTES: 3569 tbl 01 1. H = VIH, L = VIL, x = Don't care. 2. VLC = 0.2V, VHC = VCC -0.2V. 3. Other inputs ≥VHC or ≤VLC. 5 6 7 8 9 12 13 14 GND A0 A1 A2 1 2 3 4 28 27 26 25 24 23 22 21 20 17 16 15 SO28-6 A3 A4 A5 A7 A17 A16 A15 A14 NC A13 OE WE I/O0 3569 drw 02 A8 10 19 A12 A9 11 18 A11 A10 VCC A6 CS I/O1 I/O2 I/O3 CAPACITANCE (TA = +25 °C, f = 1.0MHz, SOJ package) Symbol Parameter (1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 8 pF CI/O I/O Capacitance VOUT = 3dV 8 pF NOTE: 3569 tbl 03 1. This parameter is guaranteed by device characterization, but not prod- uction tested. |
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