2

IDT71028S70

CMOS STATIC RAM 1 MEG (256K x 4-BIT)

COMMERCIAL TEMPERATURE RANGE

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Rating

Com’l.

Unit

(2)

Terminal Voltage with

–0.5 to +7.0

V

Respect to GND

Operating Temperature

0 to +70

°C

Temperature Under

–55 to +125

°C

Bias

Storage Temperature

–55 to +125

°C

Power Dissipation

1.25

W

DC Output Current

50

mA

NOTES:

3569 tbl 02

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other

conditions above those indicated in the operational sections of this

specification is not implied.

Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

PIN CONFIGURATION

RECOMMENDED DC OPERATING

CONDITIONS

Symbol

Parameter

Min.

Typ.

Max.

Unit

Supply Voltage

4.5

5.0

5.5

V

GND

Supply Voltage

0

0

0

V

Input High Voltage

2.2

—

V

Input Low Voltage

–0.5

(1)

—

0.8

V

NOTE:

3569 tbl 04

(3)

DC ELECTRICAL CHARACTERISTICS

± 10%

IDT71028

Symbol

Parameter

Test Condition

Min.

Max.

Unit

Input Leakage Current

—

5

µA

Output Leakage Current

—

5

µA

Output Low Voltage

—

0.4

V

Output High Voltage

2.4

—

V

3569 tbl 05

SOJ

TOP VIEW

TRUTH TABLE

(1,2)

CS

CS

OE

OE

WE

WE

I/O

Function

L

L

H

Read Data

L

X

L

Write Data

L

H

H

High-Z

Output Disabled

H

X

X

High-Z

X

X

High-Z

NOTES:

3569 tbl 01

3. Other inputs

5

6

7

8

9

12

13

14

GND

1

2

3

4

28

27

26

25

24

23

22

21

20

17

16

15

SO28-6

NC

OE

WE

3569 drw 02

10

19

11

18

CS

CAPACITANCE

°C, f = 1.0MHz, SOJ package)

Symbol

Parameter

(1)

Conditions

Max.

Unit

Input Capacitance

8

pF

I/O Capacitance

8

pF

NOTE:

3569 tbl 03

1. This parameter is guaranteed by device characterization, but not prod-

uction tested.