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MS10N65 Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MS10N65 Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 6 page  MS10N65 N-Channel Enhancement Mode Power MOSFET Publication Order Number: [MS10N65] © Bruckewell Technology Corporation Rev. A -2014 Source-Drain Diode Characteristics Symbol Test Conditions Min Typ. Max. Units IS -- -- 9.5 A ISM -- -- 38 VSD IF = 10 A , VGS = 0 V -- -- 1.5 V trr IF = 10 A , VGS = 0 V , dIF/dt=100A/μs -- 450 -- ns Qrr -- 4.2 -- uC Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. IAS=10A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤10A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Ordering Information Package Shipping TO-220 50 pcs/tube |
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