MS10N60

600V N-Channel MOSFET

Publication Order Number: [MS10N60]

General Description

The MS13N50 is a N-channel enhancement-mode

MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost effectiveness. The TO-220

package is universally preferred for all

commercial-industrial applications

Features

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• RoHS compliant package

Packing Information

Shipping：50/Tube ; 1,000/Box

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Drain Current -Continuous (TC=25°C)

9.5

A

Drain Current -Continuous (TC=100°C)

5.7

A

Drain Current

–Pulsed

38

A

Avalanche Energy

700

mJ

Repetitive Avalanche Energy

15.6

mJ

dv/dt

Peak Diode Recovery dV/dt

4.5

V/ns

Power Dissipation (TC=25°C)

50

W

Power Dissipation (TC=100°C)

0.38

W/°C

Operating Junction and Storage Temperature

-55 to +150

°C