UPA1725G datasheet(1/8 Pages) NEC

Part #	UPA1725G

Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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©

1999, 2000

MOS FIELD EFFECT TRANSISTOR

µµµµ PA1725

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

G14049EJ1V0DS00 (1st edition)

Date Published

January 2000 NS CP(K)

Printed in Japan

The mark

•

• shows major revised points.

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

This

µPA1725 is N-Channel MOS Field Effect Transistor

designed for power management applications of

notebook computers and so on.

FEATURES

• 2.5-V gate drive and low on-resistance

RDS(on)1 = 21.0 m

Ω MAX. (VGS = 4.5 V, ID = 3.5 A)

RDS(on)2 = 22.0 m

Ω MAX. (VGS = 4.0 V, ID = 3.5 A)

RDS(on)3 = 30.0 m

Ω MAX. (VGS = 2.5 V, ID = 3.5 A)

• Low Ciss : Ciss = 950 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1725G

Power SOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

VDSS

20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±12

V

Drain Current (DC)

ID(DC)

±7

A

Drain Current (pulse)

Note1

ID(pulse)

±28

A

Total Power Dissipation (TA = 25°C)

Note2

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to + 150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm

2 x 2.2mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

1.27

0.12 M

6.0 ±0.3

4.4

0.40

+0.10

–0.05

0.78 MAX.

0.8

0.5 ±0.2

5.37 MAX.

0.10

14

85

1,

2,3

4

5,6,7,8

; Non connection

; Source

; Gate

; Drain

•

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