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Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE

FEATURES

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications.

MARKING:

SJ

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Units

Non-Repetitive Peak reverse voltage

20

V

Peak Repetitive Peak reverse voltage

20

V

Working Peak Reverse Voltage

20

V

DC Blocking

20

V

RMS Reverse Voltage

14

V

Average Rectified Output Current

1

A

Peak forward surge current @=8.3ms

9

A

Repetitive Peak Forward Current

1.5

A

Power Dissipation

500

mW

Thermal Resistance Junction

to

Ambient

250

/W

Storage temperature

-65~+150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Reverse breakdown voltage

I = 1mA

20

V

Reverse voltage leakage current

V = 20V

1

mA

Forward voltage

I =1A

I =3A

0.45

0.75

V

V

Diode capacitance

120

pF

SOD-123

-

+

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

R(RMS)

Pd

R

R

F

F

B5817W

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/