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HY29F040AC-15I Datasheet(PDF) 1 Page - Hynix Semiconductor |
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HY29F040AC-15I Datasheet(HTML) 1 Page - Hynix Semiconductor |
1 / 40 page KEY FEATURES · · · · · 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · · · · · High performance - 55 ns access time · · · · · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and packages following industry standards for single power supply Flash memory · · · · · Minimum 100,000 Program/Erase Cycles · · · · · Sector Erase Architecture - Eight equal size sectors of 64K bytes each - Any combination of sectors can be erased concurrently; also supports full chip erase · · · · · Erase Suspend/Resume - Suspend a sector erase operation to allow a data read or programming in a sector not being erased within the same device DESCRIPTION The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512K bytes of 8 bits each. The device is offered in standard 32-pin PDIP, 32-pin PLCC and 32-pin TSOP pack- ages. It is designed to be programmed and erased in-system with a 5.0 volt power-supply and can also be reprogrammed in standard PROM programmers. The HY29F040A offers access times of 55 ns, 70 ns, 90 ns, 120 ns and 150 ns. The device has sepa- rate chip enable (/CE), write enable (/WE) and out- put enable (/OE) controls. Hyundai Flash memory devices reliably store memory data even after 100,000 program/erase cycles. The HY29F040A is entirely pin and command set compatible with the JEDEC standard for 4 Mega- bit Flash memory devices. The commands are writ- ten to the command register using standard micropro- cessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. · · · · · Internal Erase Algorithms - Automatically erases a sector, any combination of sectors, or the entire chip · · · · · Internal Programming Algorithms - Automatically programs and verifies data at a specified address. · · · · · Low Power Consumption - 40 mA maximum active read current - 60 mA maximum program/erase current -5 mA maximum standby current · · · · · Sector Protection - Hardware method disables any combination of sectors from a program or erase operation This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licences are implied. Rev.03/Aug.97 Hyundai Semiconductor The HY29F040A is programmed by executing the program command sequence. This will start the internal byte programming algorithm that automatically times the program pulse width and also verifies the proper cell margin. Erase is accomplished by executing either sector erase or chip erase command sequence. This will start the internal erasing algorithm that automatically times the erase pulse width and also verifies the proper cell margin. No preprogramming is required prior to execution of the internal erase algorithm. Sectors of the HY29F040A Flash memory array are electri- cally erased via Fowler-Nordheim tunneling. Bytes are programmed one byte at a time using a hot electron injection mechanism. The HY29F040A features a sector erase architecture. The device memory array is divided into 8 sectors of 64K bytes each. The sectors can be erased indi- vidually or in groups without affecting the data in other sectors. The multiple sector erase and full chip erase capabilities add flexibility to altering the data in the device. To protect data in the device from accidental program and erase, the device also has a sector protect function. This function hardwarewriteprotectstheselectedsectors.The sector HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
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