SILICON TRANSISTOR ARRAY

DESCRIPTION

The

µPA1456 is NPN silicon epitaxial Darlington

Power Transistor Array that built in 4 circuits designed

for driving solenoid, relay, lamp and so on.

FEATURES

ORDERING INFORMATION

Part Number

Package

Quality Grade

µPA1456H

10 Pin SIP

Standard

Please refer to "Quality grade on NEC Semiconductor Devices"

(Document number IEI-1209) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

Collector to Base Voltage

150

V

Collector to Emitter Voltage

100

V

Emitter to Base Voltage

7V

Collector Current (DC)

±5

A/unit

Collector Current (pulse)

±10

A/unit

Base Current (DC)

0.5

A/unit

Total Power Dissipation

**

3.5

W

Total Power Dissipation

28

W

Junction Temperature

150

˚C

Storage Temperature

–55 to +150

˚C

* PW

≤ 300

µs, Duty Cycle ≤ 10 %

Document No. IC-3521

(O. D. No. IC-6340)

Date Published September 1994 P

Printed in Japan

NPN SILICON POWER TRANSISTOR ARRAY

LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)

INDUSTRIAL USE

PACKAGE DIMENSION

(in millimeters)

1 2 3 4 5 6 7 8 9 10

26.8 MAX.

1.4

0.6 ±0.1

2.54

4.0

1.4

0.5 ±0.1

CONNECTION DIAGRAM

2

3

1

468

57

9

10

(C)

(E)

(B)

PIN No.

2, 4, 6, 8

3, 5, 7, 9

1, 10

: Base (B)

: Collector (C)

: Emitter (E)

Ω

Ω

.

.

.

.

The information in this document is subject to change without notice.

©

1994

DATA SHEET