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HY57V651620B Datasheet(PDF) 6 Page - Hynix Semiconductor |
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HY57V651620B Datasheet(HTML) 6 Page - Hynix Semiconductor |
6 / 12 page HY57V651620B Rev. 1.9/Apr.01 6 DC CHARACTERISTICS II (TA=0 to 70 °C , V DD =3.3 ± 0.3VNote5, V SS =0V) Note : 1.I DD1 and I DD4 depend on output loading and cycle rates. Specified values are measured with the output open 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V651620BTC-55/6/7/75/8/10P/10S/10 4.HY57V651620BLTC-55/6/7/75/8/10P/10S/10 5..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V Parameter Symbol Test Condition Speed Unit Note -55 -6 -7 -75 -8 -10P -10S -10 Operating Current I DD1 Burst length=1, One bank active t RC ≥ tRC(min), I OL =0mA 120 110 100 90 80 70 700 80 mA 1 Precharge Standby Current in Power Down Mode I DD2P CKE ≤ V IL (max), t CK = min 2 mA I DD2PS CKE ≤ V IL (max), t CK = ∞ 2 mA Precharge Standby Current in Non Power Down Mode I DD2N CKE ≥ V IH (min), CS ≥ V IH (min), t CK = min Input signals are changed one time during 2clks. All other pins ≥ V DD - 0.2V or ≤ 0.2V 15 mA I DD2NS CKE ≥ V IH (min), t CK = ∞ Input signals are stable. 15 mA Active Standby Current in Power Down Mode I DD3P CKE ≤ V IL (max), t CK = min 5 mA I DD3PS CKE ≤ V IL (max), t CK = ∞ 5 mA Active Standby Current in Non Power Down Mode I DD3N CKE ≥ V IH (min), CS ≥ V IH (min), t CK = min Input signals are changed one time during 2clks. All other pins ≥ V DD - 0.2V or ≤ 0.2V 30 mA I DD3NS CKE ≥ V IH (min), t CK = ∞ Input signals are stable. 30 mA Burst Mode Operating Current I DD4 t CK ≥ tCK (min), I OL =0mA All banks active CL=3 150 140 130 120 110 90 90 90 mA 1 CL=2 90 90 90 90 90 90 90 90 mA Auto Refresh Current I DD5 t RRC ≥ tRRC (min), All banks active 200 200 200 200 200 180 180 150 mA 2 Self Refresh Current I DD6 CKE ≤ 0.2V 2 mA 3 500 uA 4 |
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