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HY57V651620B Datasheet(PDF) 6 Page - Hynix Semiconductor

Part # HY57V651620B
Description  4 Banks x 1M x 16Bit Synchronous DRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY57V651620B Datasheet(HTML) 6 Page - Hynix Semiconductor

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HY57V651620B
Rev. 1.9/Apr.01
6
DC CHARACTERISTICS II (TA=0 to 70 °C , V DD =3.3
± 0.3VNote5, V SS =0V)
Note :
1.I DD1 and I DD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V651620BTC-55/6/7/75/8/10P/10S/10
4.HY57V651620BLTC-55/6/7/75/8/10P/10S/10
5..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Parameter
Symbol
Test Condition
Speed
Unit
Note
-55
-6
-7
-75
-8
-10P
-10S
-10
Operating Current
I DD1
Burst length=1, One bank active
t RC
≥ tRC(min), I OL =0mA
120
110
100
90
80
70
700
80
mA
1
Precharge Standby Current
in Power Down Mode
I DD2P
CKE
≤ V IL (max), t CK = min
2
mA
I DD2PS
CKE
≤ V IL (max), t CK =
2
mA
Precharge Standby Current
in Non Power Down Mode
I DD2N
CKE
≥ V IH (min), CS ≥ V IH (min), t CK
= min
Input signals are changed one time
during 2clks. All other pins
≥ V DD -
0.2V or
≤ 0.2V
15
mA
I DD2NS
CKE
≥ V IH (min), t CK =
Input signals are stable.
15
mA
Active Standby Current
in Power Down Mode
I DD3P
CKE
≤ V IL (max), t CK = min
5
mA
I DD3PS
CKE
≤ V IL (max), t CK =
5
mA
Active Standby Current
in Non Power Down Mode
I DD3N
CKE
≥ V IH (min), CS ≥ V IH (min), t CK
= min
Input signals are changed one time
during 2clks. All other pins
≥ V DD -
0.2V or
≤ 0.2V
30
mA
I DD3NS
CKE
≥ V IH (min), t CK =
Input signals are stable.
30
mA
Burst Mode Operating Current
I DD4
t CK
≥ tCK (min),
I OL =0mA
All banks active
CL=3
150
140
130
120
110
90
90
90
mA
1
CL=2
90
90
90
90
90
90
90
90
mA
Auto Refresh Current
I DD5
t RRC
≥ tRRC (min), All banks active
200
200
200
200
200
180
180
150
mA
2
Self Refresh Current
I DD6
CKE
≤ 0.2V
2
mA
3
500
uA
4


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