SILICON TRANSISTOR ARRAY

DESCRIPTION

The

µPA1453 is PNP silicon epitaxial Power Transistor

Array that built in 4 circuits designed for driving solenoid,

relay, lamp and so on.

FEATURES

ORDERING INFORMATION

Part Number

Package

Quality Grade

µPA1453H

10 Pin SIP

Standard

Please refer to "Quality grade on NEC Semiconductor Devices"

(Document number IEI-1209) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

Collector to Base Voltage

–60

V

Collector to Emitter Voltage

–60

V

Emitter to Base Voltage

–7

V

Collector Current (DC)

–5

A/unit

Collector Current (pulse)

*

–10

A/unit

Base Current (DC)

–1.0

A/unit

Total Power Dissipation

**

3.5

W

Total Power Dissipation

***

28

W

Junction Temperature

150

˚C

Storage Temperature

–55 to +150

˚C

* PW

≤ 300

µs, Duty Cycle ≤ 10 %

Document No. IC-3519

(O. D. No. IC-6339)

Date Published September 1994 P

Printed in Japan

PNP SILICON POWER TRANSISTOR ARRAY

HIGH SPEED SWITCHING USE

INDUSTRIAL USE

PACKAGE DIMENSION

(in millimeters)

1 2 3 4 5 6 7 8 9 10

26.8 MAX.

1.4

0.6 ±0.1

2.54

4.0

1.4

0.5 ±0.1

CONNECTION DIAGRAM

PIN No.

2, 4, 6, 8

3, 5, 7, 9

1, 10

: Base (B)

: Collector (C)

: Emitter (E)

3

2

1

4

5

7

6

8

9

10

The information in this document is subject to change without notice.

©

1994

DATA SHEET