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HY51V18163HGJ-5 Datasheet(PDF) 5 Page - Hynix Semiconductor |
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HY51V18163HGJ-5 Datasheet(HTML) 5 Page - Hynix Semiconductor |
5 / 12 page HY51V(S)18163HG/HGL Rev.0.1/Apr.01 5 DC CHARACTERISTICS (Vcc = 3.3V +/- 10%, TA=0 to 70°C) Note : 1. Icc depends on output load condition when the device is selected, Icc(max) is specified at the output open condition 2. Address can be changed once or less while /RAS=VIL 3. Address can be changed once or less while /CAS=VIH 4. /CAS = L (<=0.2) while /RAS=L (<=0.2) 5. L-Version Symbol Parameter Min Max Unit Note VOH Output Level Output Level voltage(Iout= -2mA) 2.4 Vcc V VOL Output Level Output Level voltage(Iout=2mA) 0 0.4 V ICC1 Operating current Average power supply operating current ( /RAS, /CAS Cycling : tRC = tRC min) 50ns - 190 mA 1, 2 60ns - 170 70ns - 150 ICC2 Standby current (TTL interface) Power supply standby current (/RAS, /CAS=VIH, Dout = High-Z) - 2 mA ICC3 /RAS only refresh current Average power supply current /RAS only refresh mode (tRC= tRC min) 50ns - 190 mA 2 60ns - 170 70ns - 150 ICC4 EDO page mode current Average power supply current EDO page mode (tPC=tPC min) 50ns - 185 mA 1, 3 60ns - 165 70ns - 145 ICC5 CMOS interface ( /RAS, /CAS >= Vcc-0.2V, Dout = High-Z) - 1 mA Standby current ( L-version) - 150 uA 5 ICC6 /CAS-before-/RAS refresh current (tRC=tRC min) 50ns - 190 mA 60ns - 170 70ns - 150 ICC7 Battery back up operating current ( standby with CBR ref.) (CBR refresh, tRC=31.3us, tRAS <= 0.3us, Dout = High-Z, CMOS interface) - 400 uA 4, 5 ICC8 Standby current (RAS=VIH, /CAS=VIL, Dout=Enable) - 5 mA 1 ICC9 Self refresh current (/RAS, /CAS <=0.2V, Dout=High-Z) - 250 uA 5 II(L) Input leakage current, Any input (0V<= Vin<=4.6V) -10 10 uA IO(L) Output leakage current, (Dout is disabled, 0V<= Vout<=4.6V) -10 10 uA |
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