©

1995, 1999

DATA SHEET

COMPOUND TRANSISTOR

FEATURES

•

9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY

•

•

TWO PACKAGE OPTIONS:

µPA104B: Studded ceramic package provides superior thermal dissipation

µPA104G: Reduced circuit size due to 14-pin plastic SOP package for surface mounting

•

EXCELLENT FOR ANALOG ADDITIONS & FORMATION OF 2-INPUT OR/NOR GATES

DESCRIPTION AND APPLICATIONS

The

µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its

internal transistor configuration and external connection options allow the user considerable flexibility in its

cellular telephone systems, instrumentation, and high speed gigabit logic circuits.

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA104B-E1

14-pin ceramic package

µPA104G-E1

14-pin plastic SOP (225 mil)

SYMBOLS

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

V

15

Collector to Emitter Voltage

V

6

Emitter to Base Voltage

V

2.5

Collector Current

mA

40

Power Dissipation

µPA104B

mW

650

µPA104G

mW

350

Junction Temperature

µPA104B

°C

200

µPA104G

°C

125

Storage Temperature

µPA104B

°C

–55 to +200

µPA104G

°C

–55 to +125

* Absolute maximum ratings for each transistor.

HIGH FREQUENCY NPN TRANSISTOR ARRAY

Caution electro-static sensitive devices

Document No. P10709EJ2V0DS00 (2nd edition)

Date Published October 1999 N CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

The mark

shows major revised points.