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UPA1428A Datasheet(PDF) 1 Page - NEC

Part No. UPA1428A
Description  NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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©
DATA SHEET
1994
Printed in Japan
SILICON TRANSISTOR ARRAY
DESCRIPTION
The
µPA1428A is NPN silicon epitaxial Darlington Power
Transistor Array that built in Surge Absorber 4 circuits
designed for driving solenoid, relay, lamp and so on.
FEATURES
Surge Absorber built in.
Easy mount by 0.1 inch of terminal interval.
High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
Quality Grade
µPA1428AH
10 Pin SIP
Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO
60
±10
V
Collector to Emitter Voltage
VCEO
60
±10
V
Emitter to Base Voltage
VEBO
8V
Surge Sustaining Energy
ECEO(sus)
30
mJ/unit
Collector Current (DC)
IC(DC)
±2
A/unit
Collector Current (pulse)
IC(pulse)
*
±3
A/unit
Base Current (DC)
IB(DC)
0.2
A/unit
Total Power Dissipation
PT1**
3.5
W
Total Power Dissipation
PT2
***
28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
* PW
≤ 350
µs, Duty Cycle ≤ 2 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Cuircuits, Tc = 25 ˚C
Document No. IC-3479
(O.D. No. IC-8359)
Date Published September 1994 P
µPA1428A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
1.4
1
0.6 ±0.2
2.54
0.5 ±0.2
1.4
4.0
2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
2
1
5
4
7
6
10
9
8
(B)
R1
(E)
(C)
R2
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
R1 = 10 k
R2 = 900
.
.
.
.
The information in this document is subject to change without notice.




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